Irff9110
WebIRFF9110 P-Channel MOSFET. V DSS = 100V I D = 2.5A R DS(ON) = 1.2 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter Min. Typ. Max. Units V DSS Drain Source Breakdown Voltage 100 V I D Continuous Drain Current 2.5 A WebHEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE), IRFAE50 Datasheet, IRFAE50 circuit, IRFAE50 data sheet : IRF, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
Irff9110
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WebIRFF9110 manufactured by:-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package: Download IRFF9110 datasheet from International Rectifier: pdf 138 kb : Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39 Others with the same file for datasheet: IRFF9113: Download IRFF9110 datasheet from New Jersey Semiconductor: pdf 997 kb : WebJun 20, 2024 · irff9110.pdf PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.
WebBuy IRFF9110 HARRIS , Learn more about IRFF9110 HEXFET TRANSISTORS THRU-HOLE (TO-205AF), View the manufacturer, and stock, and datasheet pdf for the IRFF9110 at … WebP-CHANNEL POWER MOSFETs IRFF9110 IRFFS111 IRFFS112 IRFFS113 -100 Volt, 1.2 Ohm HEXFET Features: • P-Channel Versatility » Fast Switching • Low Drive Current • Ease of …
WebOrder today, ships today. IRFL9110 – P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223 from Vishay Siliconix. Pricing and Availability on millions of electronic … WebIRFF9110 Product details The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique …
WebJANS2N6851 Product details. 200V, P-CHANNEL. The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.
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